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CYStech Electronics Corp.
Silicon PNP Epitaxial Planar Transistor
Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date : Page No. : 1/4
BTB1236AT3
Description
* High BVCEO * High current capability * Pb-free package
Symbol
BTB1236AT3
Outline
TO-126
BBase CCollector EEmitter
E CB
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Power Dissipation @TA=25 Power Dissipation @TC=25 Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PD Tj Tstg Limits -180 -160 -5 -1.5 -3 0.5 1 20 150 -55~+150 Unit V V V A A A W C C
BTB1236AT3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. -180 -160 -5 60 30 Typ. 140 27 Max. -1 -1 -0.6 -1.5 200 Unit V V V A A V V MHz pF
Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date : Page No. : 2/4
Test Conditions IC=-50A, IE=0 IC=-1mA, IB=0 IE=-50A, IC=0 VCB=-160V, IE=0 VEB=-4V, IC=0 IC=-1A, IB=-100mA VCE=-5V, IC=-150mA VCE=-5V, IC=-100mA VCE=-5V, IC=-500mA VCE=-5V, IC=-150mA VCB=-10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification of hFE 1
Rank Range K 60~120 P 82~190 Q 120~200
BTB1236AT3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date : Page No. : 3/4
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
Saturation Voltage-(mV)
1 10 100 1000 10000
Current Gain---HFE
100
10
1 Collector Current---IC(mA)
10 1 10 100 1000 Collector Current---IC(mA) 10000
On Voltage vs Collector Current
10000
VBE(ON)@VCE=5V
Power Derating Curve
1.2
Power Dissipation---PD(W)
1 0.8 0.6 0.4 0.2 0
On Voltage---(mV)
1000
100 1 10 100 1000 10000 Collector Current---IC(mA)
0
50
100
150
200
Ambient Temperature---TA()
Power Derating Curve
25 20 15 10 5 0 0 50 100 150 200 Case Temperature---TC()
Power Dissipation---PD(W)
BTB1236AT3
CYStek Product Specification
CYStech Electronics Corp.
TO-126 Dimension
D A B 123 G C I
Spec. No. : C854T3 Issued Date : 2005.08.23 Revised Date : Page No. : 4/4
E
J
K M
Marking:
3 4
B1236A
Style: Pin 1.Emitter 2.Collector 3.Base
F H L
1 2
3-Lead TO-126 Plastic Package CYStek Package Code: T3
*: Typical
DIM 1 2 3 4 A B C D E
Inches Min. Max. *3 *3 *3 *3 0.1500 0.1539 0.2752 0.2791 0.5315 0.6102 0.2854 0.3039 0.0374 0.0413
Millimeters Min. Max. *3 *3 *3 *3 3.81 3.91 6.99 7.09 13.50 15.50 7.52 7.72 0.95 1.05
DIM F G H I J K L M
Inches Min. Max. 0.0280 0.0319 0.0480 0.0520 0.1709 0.1890 0.0950 0.1050 0.0450 0.0550 0.0450 0.0550 *0.0217 0.1378 0.1520
Millimeters Min. Max. 0.71 0.81 1.22 1.32 4.34 4.80 2.41 2.66 1.14 1.39 1.14 1.39 *0.55 3.50 3.86
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1236AT3
CYStek Product Specification

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